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Position Overview
Acts as a technical authority in 3D NAND Advanced thin film development, setting strategic direction and leading multi-functional initiatives. Drives department-wide impact by architecting solutions, accelerating innovation adoption, and influencing technical standards. Engages in global projects and mentors engineers to elevate technical excellence.
Key Responsibilities
Drive complex problem solving across process/structure/hardware/device interactions—root cause analysis, FMEA, SPC, and corrective actions that recover window with no yield trade-off.
Utilize advanced characterization (SIMS, XPS, TEM, EDX/EELS, electrical stress testing, TDS) to correlate process parameters to device performance; derive correlation models that predict reliability and scaling behavior.
Publish internal papers, BKMs, and present to senior leadership; uphold Micron’s TLP tenets: Innovate, Focus, Impact, Influence, Lead, Mentor.
Technical Expertise:
Hardware optimization: Precursor delivery & temperature control, chamber matching/segregation, batch vs single wafer trade-offs, metrology hooks.
Skilled in advanced characterization techniques (SIMS, XPS, TEM, electrical stress testing) and correlating process parameters to structural and device performance.
Requirements :
PhD or equivalent in Materials Science, Chemical Engineering, Physics, Chemistry, Electrical Engineering, or related field.
15 to 20 years of experience in Thin Film research and development for NAND process specifically plasma and thermal CVD for dielectric (including highK and lowK) and carbon-based depositions.
Demonstrated leadership in multi-functional development and vendor collaboration.
Proven track record in architecting solutions, process-device correlation, and mentoring engineers—aligned to Micron’s SMTS leadership expectations.